Web7 apr. 2024 · The etching of CrO x proceeds without the need for O 2 in the feed, and, therefore, the ER can reach much higher values (beyond 2000 nm/min at 300 W). As the plasma mixture seems to be inadequate, a sequential process is studied with improved selectivity while preserving directionality. Web5 okt. 2024 · We investigated the selective etching of Si versus Si1−xGex with various Ge concentrations (x = 0.13, 0.21, 0.30, 0.44) in tetramethyl ammonium hydroxide (TMAH) solution. Our results show that the Si1−xGex with a higher Ge concentration was etched slower due to the reduction in the Si(Ge)–OH bond. Owing to the difference in the …

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Web13 jul. 2011 · The etch rate ratio (etch selectivity) between Si 1−x Ge x and Si escalated with the growth of HNO 3 concentration at low concentration level, and when the HNO 3 concentration exceeded a critical level the etch selectivity descended with higher HNO 3 … WebElectrolytic Etching. Place the specimen immersed face up in the etching reagent. The cathode is placed approximately one inch from the specimen, and the anode is put in … maritime craft services irvine

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